| PART |
Description |
Maker |
| EM6160FV32BW-10L EM6160V32BW-10L EM6161FV32BW-10L |
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
Emerging Memory & Logic Sol...
|
| K6F3216U6M K6F3216U6M-F |
2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| EM6320FP32AW-70L EM6320FP32AW-70LF EM6320FP32AW12L |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
Emerging Memory & Logic...
|
| DSK6F8016U6C |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung Electronic
Samsung semiconductor
|
| EM646FV16FU |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions
|
| K6F4016U4G |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung semiconductor
|
| HY62SF16404E-SF HY62SF16404E-SFI HY62SF16404E-DF H |
256K x16 bit 1.65 ~ 2.3V Super Low Power FCMOS Slow SRAM
|
Hynix Semiconductor
|
| HY62UF16404D |
x16|3V|55/70|Super Low Power Slow SRAM - 4M x16 | 3V的| 55/70 |超级低功耗SRAM的速度 4
|
GE Security, Inc.
|
| GM71C18163BT-8 GM71C18163BJ-6 GM71C18163BJ-8 GM71C |
1,048,576 words x 16 bit DRAM, 80ns, low power
1,048,576 words x 16 bit DRAM, 70ns, low power
1,048,576 words x 16 bit DRAM, 60ns, low power
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
LG Semiconductor
|
| IS62WV6416DALL/DBLL IS65WV6416DALL/DBLL IS62WV6416 |
64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
64K X 16 STANDARD SRAM, 35 ns, PBGA48
|
Integrated Silicon Solution, Inc
INTEGRATED SILICON SOLUTION INC
|
| HY62LF16201ALLF-85 HY62LF16201ALLF-85I HY62LF16201 |
Super Low Power Slow SRAM - 2Mb
x16 SRAM
|
Hynix Semiconductor
|
| EM640FR16AS-45L EM640FR16AS-45S EM640FR16AS-85L EM |
128K x16 bit Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic...
Emerging Memory & Logic Solutions Inc
|
